Data for reference lee-physstatsola-188-595

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

C. D. Lee, A. Sagar, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. W. P. Hsu

Physica Status Solidi A 188, 595 (2001).

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This item is cited by the following items in the database:

  1. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Contributed by A submitted manuscript, on Sunday, February 24, 2002 10:16:44 AM

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