Data for reference haffouz-physstatsola-176-677

Optimization of Si/N treatment time of sapphire substrate and its effect on the MOVPE GaN overlayers

S. Haffouz, B. Beaumont, P. Vénnègues, P. Gibart

Physica Status Solidi A 176, 677 (1999).

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This item is cited by the following items in the database:

  1. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A submitted manuscript, on Tuesday, November 26, 2002 7:05:18 PM

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