Data for reference grzegory-physscr-t39-242

Synthesis and Crystal Growth of AIIIBV Semiconducting Compounds under High Pressure of Nitrogen

I. Grzegory, S. Krukowski

Physica Scripta T39, 242 (1991).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
  2. GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Tuesday, May 3, 2005 5:07:08 PM.
© 1998 The Materials Research Society