Data for reference godlewski-physicab-273-274-39

Mechanism of radiative recombination in acceptor-doped bulk GaN crystals.

M. Godlewski, T. Suski, I. Grzegory, S. Porowski, J. P. Bergman, W. M. Chen, B. Monemar

Physica B 273-274, 39 (1999).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
  2. On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation

Contributed by A submitted manuscript, on Tuesday, November 14, 2000 4:19:49 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 12:59:00 PM.
© 1998 The Materials Research Society