Data for reference 5306662-patent-us-1994

Method of manufacturing p-type compound semiconductor

S. Nakamura, S. Iwasa, M. Senoh

United States Patent OfficePatent Number 5306662

1994.

This item is cited by the following items in the database:

  1. Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure

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