tanaka-oedt-6-150

Data for reference tanaka-oedt-6-150

Reactive Fast Atom Beam Etching of a Wide-gap Semiconductor GaN

Hidenao Tanaka, Fusao Shimokawa, Toru Sasaki, Takashi Matsuoka

Optoelectronics - Devices and Technologies 6(1), 150 (1991).

RIE of GaN in Cl₂ chemistry.

This item is cited by the following items in the database:

ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures

Contributed by S. Strite from internet-gw.zurich.ibm.ch. on Thursday, October 24, 1996 12:41:08 PM

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