Data for reference kucheyev-nimb-178-209

The effects of ion mass, energy, dose. Flux and irradiation temperature on implantation disorder in GaN

S. O. Kucheyev, J. S. Williams, J. Zou, C. Jagadish, G. Li

Nuclear Instrumentation and Methods B 178, 209 (2001).

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This item is cited by the following items in the database:

  1. Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN

Contributed by A submitted manuscript, on Tuesday, December 17, 2002 2:52:04 PM

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