Data for reference papanicolau-nimb-148-416

Ion-implantation in SiC and GaN

N. Papanicolau, M. V. Rao, B. Molnar, J. Tucker, A. Edwards, O. W. Holland, M. C. Ridgway

Nuclear Instrumentation and Methods B 148, 416 (1999).

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This item is cited by the following items in the database:

  1. Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN

Contributed by A submitted manuscript, on Tuesday, December 17, 2002 2:51:53 PM

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