Data for reference akasaki-nagoyamfe-43-147

MOVPE Growth of GaN and AlxGa1-xN and Their Luminescence and Electrical Properties

I. Akasaki, K. Hiramatsu, H. Amano

Memories of the Faculty of Engineering, Nagoya University 43(2), 147 (1991).

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This item is cited by the following items in the database:

  1. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals

Contributed by Vladimir I. Nikolaev from plast.ioffe.rssi.ru. on Friday, June 21, 1996 12:31:22 PM

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