kornitzer-msf-258-1113

Data for reference kornitzer-msf-258-1113

Donor-Acceptor Pair Transitions In GaN

K Kornitzer, M Mayer, M Mundbrod, K Thonke, A Pelzmann, M Kamp, R Sauer

Materials Science Forum 258, 1113 (1997).

In this article we report the observation of several new photoluminescence bands in the near-bandedge energy range of GaN. The 6H GaN layers were grown by molecular beam epitaxy at temperatures of about 700°C on sapphire substrates with an intermediate AlN/GaN nucleation layer. Additional to the well-known donor-bound exciton line at 3.475eV and the oxygen-related 3.418eV line (at 4K), we find weaker defect-related lines in the energy range extending to 400meV below the bandgap, but no "yellow band". Variations of the excitation power and variations of the sample temperatures between 4K and room temperature allows us to identify a line at 3.345eV as donor-acceptor pair transitions. The estimated binding energy of the acceptor involved is no more than 150meV. Further lines at 3.365eV and 3.21eV are studied as well, but not finally assigned.

This item is cited by the following items in the database:

Properties of GaN epilayers grown on misoriented sapphire substrates

Contributed by Markus Kamp from melon.e-technik.uni-ulm.de. on Thursday, May 28, 1998 12:26:16 PM

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