Data for reference goetz-mseb-59-211

Hall-effect characterization of III-V nitride semiconductors for high efficiency light emitting diode

W. Goetz, R. S. Kern, C. H. Chen, H. Liu, D. A. Steigerwald, R. M. Fletcher

Materials Science and Engineering B-Solid State Materials for Advanced Technology 59, 211 (1999).

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This item is cited by the following items in the database:

  1. Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.

Contributed by A submitted manuscript, on Sunday, July 23, 2000 1:25:35 PM

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