Data for reference alves-mseb-59-207

Annealing behavior and lattice site location of Hf implanted GaN

E Alves, MF da Silva, JG Marques, JC Soares, K Freitag

Materials Science and Engineering B-Solid State Materials for Advanced Technology 59(1-3), 207 (1999).

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This item is cited by the following items in the database:

  1. Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides

Contributed by U. Wahl from web-cache-3.cern.ch. on Sunday, September 26, 1999 4:10:45 PM

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