Data for reference leroux-mseb-50-97

Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennegues, J. Massies, P. Gibart

Materials Science and Engineering B-Solid State Materials for Advanced Technology 50, 97 (1997).

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This item is cited by the following items in the database:

  1. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  2. On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation

Contributed by A submitted manuscript, on Wednesday, July 22, 1998 1:14:58 PM

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