Data for reference kim-mseb-50-82

EFFECTS OF INDUCTIVELY COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN AND OHMIC CONTACT FORMATIONS

Hyeon-Soo Kim, Yong-Hyuk Lee, Geun-Young Yeom, Jae-Won Lee, Tae-Il Kim

Materials Science and Engineering B-Solid State Materials for Advanced Technology 50, 82 (1997).

GaN etching was performed using planar inductively coupled Cl2/H2 plasmas as a function of gas combination and substrate temperature at 10mTorr, 600Watts of inductive power , and -120 volts of bias voltage. In addition, effects of plasma chemistry on the surface stoichiometry and ohmic contact resistivity fabricated on the etched n-GaN were estimated using XPS, AES, and TLM. As the addition of hydrogen to the Cl2 plasma increased to 100%, GaN etch rates decreased possibly due to the reduction of chlorine radical and chlorine ion densities required for the formation of GaClx etch products, and surface composition, even though the variation of surface composition is limited less than 100 Å, was changed from Ga-rich to N-rich. The contact resistivity of the contact fabricated on the etched n-GaN was the lowest for the pure Cl2 and the increase of H2 in Cl2/H2 increased the contact resistivity of the contact. Etch profile was more anisotropic for the pure Cl2 case, compared to that for the Cl2/H2 conditions.

This item cites the following items in the database:

  1. The facet formation of GaN-based device using chemically assisted ion beam etching(CAIBE) with photoresist mask
  2. Etch Characteristics of GaN Using Inductively-Coupled Cl2/HBr and Cl2/Ar Plasmas
  3. EFFECTS OF INDUCTIVELY COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN AND OHMIC CONTACT FORMATIONS
  4. Characteristics of Inductively Coupled Cl2/BCl3 Plasmas during GaN Etching

This item is cited by the following items in the database:

  1. EFFECTS OF PLASMA CONDITIONS ON THE ETCH PROPERTIES OF AlGaN
  2. Etch Characteristics of GaN Using Inductively-Coupled Cl2/HBr and Cl2/Ar Plasmas
  3. EFFECTS OF INDUCTIVELY COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN AND OHMIC CONTACT FORMATIONS
  4. Characteristics of Inductively Coupled Cl2/BCl3 Plasmas during GaN Etching

Contributed by Hyeon-Soo Kim from webcache14b.cache.pol.co.uk. on Tuesday, February 15, 2000 8:10:24 AM
Modified by Hyeon-Soo Kim from webcache15x.cache.pol.co.uk. on Thursday, March 23, 2000 6:23:16 AM

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