Data for reference kuznetsov-mseb-46-74

Electrical characteristics of GaN/6H-SiC n-p heterojunctions.

NI Kuznetsov, AE Gubenco, AE Nikolaev, YuV Melnik, MN Blashenkov, IP Nikitina, VA Dmitriev

Materials Science and Engineering B-Solid State Materials for Advanced Technology 46, 74 (1997).

The electronic properties of the n-p heterojunctions grown by HVPE have been investigated.

This item cites the following items in the database:

  1. Microstructure of GaN epitaxy on SiC using AlN buffer layers
  2. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
  3. The preparation and properties of vapor-deposited single-crystal-line GaN
  4. High-quality GaN grown directly on SiC by halide vapour phase epitaxy.
  5. Growth and Doping of GaN Directly on 6H-SiC by MBE
  6. Schottky Barriers on n-GaN Grown on SiC
  7. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
  8. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

This item is cited by the following items in the database:

  1. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Sunday, July 20, 1997 7:52:37 AM

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