Data for reference porowski-mseb-44-407

Growth and properties of single crystalline GaN substrates and homoepitaxial layers

S. Porowski

Materials Science and Engineering B-Solid State Materials for Advanced Technology 44, 407 (1997).

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This item is cited by the following items in the database:

  1. Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals

Contributed by A submitted manuscript, on Thursday, September 10, 1998 3:31:06 PM

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