Data for reference averyanova-mseb-43-167

Analysis of vaporization kinetics of group-III nitrides

M.V. Averyanova, I.N. Przhevalsky, S.Yu. Karpov, Yu.N. Makarov, M.S. Ramm, R.A. Talalaev

Materials Science and Engineering B-Solid State Materials for Advanced Technology 43, 167 (1997).

Congruent and non-congruent evaporation of GaN and AlN under Knudsen and Langmuir conditions is analyzed. It is shown that evaporation of these compounds is controlled by surface kinetics which can be accounted for by introducing of temperature dependent evaporation coefficient. Comparison with experimental data on GaN and AlN evaporation is done.

This item is cited by the following items in the database:

  1. The role of gaseous species in group-III nitride growth
  2. Novel approach to simulation of group-III nitrides growth by MOVPE

Contributed by S. Yu. Karpov from master.lek.ru. on Thursday, June 19, 1997 1:03:20 PM

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