Data for reference cremades-mseb-42-230

Cathodoluminescence study of GaN epitaxial layers

A. Cremades, J. Piqueras, C. Xavier, T. Monteiro, E. Pereira, B. K. Meyer, D. M. Hofmann, S. Fischer

Materials Science and Engineering B-Solid State Materials for Advanced Technology 42, 230 (1997).

Morphology of wurtzite GaN epilayers is studied.

This item is cited by the following items in the database:

  1. Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

Contributed by A submitted manuscript, on Wednesday, September 9, 1998 1:32:29 AM

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