Data for reference kingsley-mseb-29-78

Development of Chemical Beam Epitaxy for the Deposition of Gallium Nitride

CR Kingsley, TJ Whitaker, ATS Wee, et al.

Materials Science and Engineering B-Solid State Materials for Advanced Technology 29(1-3), 78 (1995).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN

Contributed by E. Hellman

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 11:18:05 AM.
© 1998 The Materials Research Society