Data for reference iyer-mrssp-743-l3.20

Growth and Characterization of Non-Polar (11[bar]20) GaN and AlGaN/GaN MQWs on R-Plane (10-12) Sapphire

S. Iyer, D. J. Smith, A. Bhattacharyya, K. Ludwig Jr, T. D. Moustakas

Materials Research Society Symposium Proceedings 743, L3.20 (2002).

This item is cited by the following items in the database:

  1. P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire

Contributed by A submitted manuscript, on Monday, September 8, 2003 10:08:15 AM

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