jasinski-mrssp-622-t6.34

Data for reference jasinski-mrssp-622-t6.34

MICROSTRUCTURE AND THERMAL STABILITY OF TRANSITION METAL NITRIDES AND BORIDES ON GaN

J Jasinski, E Kaminska, A Piotrowska, A Barcz, M Zielinski

Materials Research Society Symposium Proceedings 622, T6.34 (2000).

Microstructure and thermal stability of ZrN/ZrB2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 11000C in N2 atmosphere does not lead to any observable metal/ semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB2 metallization at 8000C, when the heat treatment is performed in O2 ambient has been observed.Mat. Res. Soc. Symp.

This item cites the following items in the database:

Thermal stability of W ohmic contacts to n-type GaN

Contributed by E. Kaminska from eliana.ite.waw.pl. on Friday, July 7, 2000 8:58:11 AM
Modified by E. Kaminska from eliana.ite.waw.pl. on Monday, July 24, 2000 5:25:08 AM

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