Data for reference osinsky-mrssp-512-15

temperature dependence of breakdown field in p-π-n GaN diodes

A. Osinsky, M. S. Shur, R. Gaska

Materials Research Society Symposium Proceedings 512, 15 (1998).

This item is cited by the following items in the database:

  1. Growth and Device Performance of GaN Schottky Rectifiers

Contributed by A submitted manuscript, on Thursday, June 24, 1999 5:05:06 PM

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