Data for reference shur-mrssp-483-15

GaN and Related Materials for High Power Applications

M. S. Shur

Materials Research Society Symposium Proceedings 483, 15 (1998).

This item is cited by the following items in the database:

  1. 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor
  2. Novel approach to simulation of group-III nitrides growth by MOVPE

Contributed by A submitted manuscript, on Wednesday, October 21, 1998 10:36:42 AM

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