Data for reference ponce-mrssp-482-453

Microstructure of InGaN quantum wells

F. A. Ponce, D. Cherns, W. Goetz, R. S. Kern

Materials Research Society Symposium Proceedings 482, 453 (1998).

This item is cited by the following items in the database:

  1. Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
  2. Development of High Power Green Light Emitting Diode Chips

Contributed by A submitted manuscript, on Thursday, August 29, 2002 6:46:32 PM

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