Data for reference kisielowski-mrssp-482-369

Atomic scale aluminum and strain distribution in a GaN/AlxGa1-xN heterostructure

C. Kisielowski, O. Schmidt, J. Yang

Materials Research Society Symposium Proceedings 482, 369 (1998).

This item is cited by the following items in the database:

  1. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells

Contributed by A submitted manuscript, on Friday, January 21, 2000 11:33:13 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 11:17:30 AM.
© 1998 The Materials Research Society