Data for reference hiramatsu-mrssp-482-257

Selective Area Growth of GaN by MOVPE and HVPE

K. Hiramatsu, H. Matsushima, T. Shibata, N. Sawaki, K. Tadatomo, H. Okagawa, Y. Ohuchi, Y. Honda, T. Matsue

Materials Research Society Symposium Proceedings 482, 257 (1998).

This item is cited by the following items in the database:

  1. Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  2. Localized Epitaxy of GaN by HVPE on patterned Substrates

Contributed by A submitted manuscript, on Thursday, July 9, 1998 11:20:44 PM

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