talyansky-mrssp-468-99

Data for reference talyansky-mrssp-468-99

Pulsed Laser Deposition of Gallium Nitride on Sapphire

V. Talyansky, R.D. Vispute, R.P. Sharma, S. Choopun, M.J. Downes, T. Venkatesan, Y.X. Li, L.G. Salamanca-Riba, M.C. Wood, R.T. Lareau, K.A. Jones

Materials Research Society Symposium Proceedings 468, 99 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
We have deposited GaN films on sapphire (001) substrates by laser ablating a nominally stoichiometric GaN target in ammonia atmosphere. The structural parameters and composition of the films were found to be superior to those made with a metal Ga target and were strongly dependent on the substrate temperature, ammonia pressure, and laser fluency during the deposition. The film crystalline quality and composition were evaluated using x-ray diffraction (XRD) θ-2θ and φ scans. high resolution transmission electron microscopy (TEM) Rutherford backscattering (RBS) technique, as well as electrical and spectrophotometric measurements. The best films exhibited a strong c-axis orientation with the full width at half-maximum (FWHM) of the GaN (002) peak rocking curve of 0.3°ree;, an in-plane alignment with the FWHM of the GaN (101) peak of less than 5°ree;, a refractive index of about 3, and an optical absorption edge around 334 nm. This work was supported with an MRCP Army Grant, DAAL 019523530.

This paper is part of Gallium Nitride and Related Materials II

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