Materials Research Society Symposium Proceedings 468, 93 (1997).
Below is the abstract submitted to the meeting, not the abstract of the published paper:
Pyrolytic technique of preceramic precursors is one of the soft chemical routes to ceramics, which has potential advantages. Although extensive work has been reported on the conversion into SiC, Si3N4, BN and AlN via pyrolysis, the pyrolytic preparation of GaN has hardly been investigated. Thus, the pyrolysis of [Ga(NEt2)3]2 was investigated as possible route for preparation of GaN. The precursor, [Ga(NEt2)3]2, was synthesized by the reaction of gallium chloride with lithium diethylamide, and the ammonolysis precursor was also synthesized by passing NH3 gas into [Ga(NEt2)3]2 solution at 0 °ree;C for 2h. These precursors were pyrolyzed at 600 °ree;C for 4h under Ar and NH3 atmospheres. X-ray diffraction (XRD) pattern of the pyrolyzed product of [Ga(NEt2)3]2 under Ar exhibited the intense peak at 2θ = 34 °ree; with peaks at 2θ =32, 37, 58 and 69 °ree;. This pattern was almost consistent with that of reported GaN containing stacking faults with hexagonal and cubic planes. The mean crystalline size was estimated to be about 10 nm on the basis of Scherrer equation. When [Ga(NEt2)3]2 was pyrolyzed under NH3, poorly crystalline GaN containing stacking faults was formed. Furthermore, in the case of the ammonolysis precursor, the XRD patterns of the products pyrolyzed under both Ar and NH3 showed broad peaks assignable to poorly crystalline GaN containing stacking faults.
This paper is part of Gallium Nitride and Related Materials II
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