okamoto-mrssp-468-87

Data for reference okamoto-mrssp-468-87

Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates

M. Okamoto, T. Ogawa, Y. Mori, T. Sasaki

Materials Research Society Symposium Proceedings 468, 87 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Aluminum nitride (AlN) is of great interest because of its electronic, optical, and thermal properties. In the present work, we report on the highly oriented AlN film obtained using pulsed laser deposition from sintered AlN target in a reactive nitrogen plasma ambient. The AlN thin films were grown on Si(111) substrates at temperatures of 600–950°ree;C for 5 h. The AlN films obtained were characterized by XRD, SEM, CL and Raman spectroscopy. The XRD investigation revealed that oriented AlN thin films have been obtained on Si(111) substrates. The orientational relation of AlN with the Si(111) substrate was found to be AlN(0002)/Si(111). The (0002) X-ray peak width became narrower with increasing substrate temperature. We obtained the very sharp X-ray diffraction peak of AlN(0002) at 950°ree;C with θ/2θ FWHM of 0.282°ree; and ω FWHM of 2.05°ree;. The CL investigation at room temperature showed strong luminescence lines near 315nm. Similar to XRD investigation, CL peak width became narrower from 54.1nm to 31.7nm with increasing substrate temperature.

This paper is part of Gallium Nitride and Related Materials II

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