wachtendorf-mrssp-468-7

Data for reference wachtendorf-mrssp-468-7

Reliable, Reproducible, and Efficient MOCVD of III-Nitrides in Production Scale Reactors

B. Wachtendorf, R. Beccard, D. Schmitz, H. Jürgensen, O. Schön, M. Heuken, E. Woelk

Materials Research Society Symposium Proceedings 468, 7 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
The worldwide demand for Ultra-High-Brightness blue and green LEDs has driven the development of MOCVD for Al-Ga-In-N alloy systems toward efficient multiwafer technology. We present a class of MOCVD reactors with loading capacities between one and seven 2-inch wafers. Both reactors and processes are strictly designed for the mass production of LED structures. Key features of the reactors are: flexibility in the choice of the carrier gas in each single step of the structures, extremely low thermal mass in order to allow quick adjustment of different growth temperatures for each layer, and real two-flow injection of the group III and group V reactants to minimize undesired prereactions. The MOCVD process is also designed in a way to ensure maximum reliability and reproducibility. Especially the initial deposition steps which are commonly known to have a great influence on the layer quality have been optimized This results in an excellent reproducibility from wafer to wafer, run to run, and machine to machine. The design provides material with abrupt interfaces, also while using different substrates like Al₂O₃, SiC, Si. Our processes yield device quality GaN with x-ray FWEM of 30 arcsec and excellent PL uniformities better than 1 nm across a 2-inch wafer. Key to the excellent results in the high flexibility of this unique MOCVD process that can be used between 10 and 1,000 mbar, a variety of total flow rates and extremely precise temperature control and uniformity across the entire reactor and the substrates, by means of a multicoil heater system. Using all these flexible parameters in appropriate way allows to adjust the required growth rates and thicknesses in the nucleation layers and the active layers and, furthermore, to obtain the necessary control of the In composition in InGaN. Finally, we present full 2-inch wafer mapping data (High Resolution Photoluminescence Wafer Scanning) revealing the excellent uniformity of the nitride compounds. Wavelength uniformities below 0.5 nm for GaN and 1 nm for GaInN are achieved as well as intensity uniformitites below 10%.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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