ishida-mrssp-468-69

Data for reference ishida-mrssp-468-69

Growth of GaN Thin Films on Sapphire Substrate by Low- Pressure MOCVD

M. Ishida, T. Hashimoto, T. Takayama, O. Imafuji, M. Yuri, A. Yoshikawa, K. Itoh, Y. Terakoshi, T. Sugino, J. Shirafuji

Materials Research Society Symposium Proceedings 468, 69 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Effects of the surface nitridation of sapphire and the thickness of a GaN buffer layer on the quality of GaN films are investigated. GaN films are grown on sapphire(0001) substrates by low pressure MOCVD using TMG nnd NH₃ as source materials. The substrate is first nitridated at 1000°ree;C in NH₃/H₂ ambient. The nitridation time is varied from 5 min to 30 min. After the nitridation of the substrate, a GaN buffer layer is deposited at 600°ree;C. The thickness of the GaN buffer layer is varied from 10 nm to 40 nm. Then an epitaxial GaN film is grown for 1 hour at 1000°ree;C with a V/III ratio of 5500. The pressure is kept at 6.67 x 10³ Pa throughout the growth. The film grown with 30 min nitridation and a 40 mn buffer layer shows smooth surface morphology, and XRD analysis shows that the film is single crystal with hexagonal polytype. Strong band-edge photoluminescence with a FWHM of 150 meV is observed at room temperature. The films grown with shorter nitridation time or a thinner buffer layer show 3D growth. It is found that the quality of GaN films depends on both the nitridation time and the thickness of the GaN buffer layer.

This paper is part of Gallium Nitride and Related Materials II

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