tsuchiya-mrssp-468-63

Data for reference tsuchiya-mrssp-468-63

Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor- Phase Epitaxy

H. Tsuchiya, K. Sunaba, S. Yonemura, T. Suemasu, F. Hasegawa

Materials Research Society Symposium Proceedings 468, 63 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
It has been reported that cubic component in the GaN grown on (001) GaAs by HVPE is negligibly small even if the θ-2θ XRD shows only cubic (002) peak, because the hexagonal GaN is easily grown on GaAs (111) facets. In this study, the ratio of cubic and hexagonal components of GaN layers grown on (001) GaAs was estimated by ratio of the integrated XRD intensities from cubic (002) and hexagonal (1011) planes measured by ω scan. The GaN layers were grown in a conventional HVPE system. Thermal cleaning temperature in H₂ ambient was changed from 550°ree;Cto 650°ree;C. The about 30nm GaN buffer layer was grown at 500°ree;C. Subsequently, a thick GaN layer was grown at 800°ree;C. The V/III ratio during the whole growth was varied between 200 and 600. When the sample was measured by θ-2θ scan, the only XRD peak of cubic GaN was observed, but both cubic and hexagonal XRD peak were observed by ω scan. It was found that the cubic/hexagonal ratio greatly depended on the thermal cleaning condition prior to the buffer layer growth and the V/III ratio during the growth. When the V/III ratio was 600, the cubic component was only about 1% of hexagonal one, but it increased to about 60% by decreasing the V/III ratio to 300. Furthermore, the cubic component increased to 85% by decreasing the thermal cleaning temperature to 600°ree;Cfor 10 minutes from 650°ree;C. This sample exhibited a strong PL emission at 377nm (3.28eV), which corresponds to the band edge emission of cubic GaN.

This paper is part of Gallium Nitride and Related Materials II

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