wolter-mrssp-468-495

Data for reference wolter-mrssp-468-495

Growth and Characterization of Thermal Oxides on Gallium Nitride

Scott D. Wolter, Suzanne E. Mohney, Hari Venugopalan, Debra L. Waltemyer, Brian P. Luther

Materials Research Society Symposium Proceedings 468, 495 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Both oxidation and removal of the thermal oxide are important processing steps in the fabrication of devices from many semiconductors. For GaN, these processes may be useful in the preparation of the GaN surface prior to metallization or in the future for the removal of surface damage from GaN wafers. Unfortunately, very little information about the thermal oxide on GaN is currency available. In this study, thick GaN epilayers and GaN powders were exposed to dry air at 450°ree;C, 750°ree;C, 900°ree;C, 925°ree;C, and 950°ree;C for periods of 1-25 hours. Following oxidation, the epilayers were analyzed by x-ray photoelectron spectroscopy and glancing incidence x-ray diffraction, and the powders were analyzed by conventional x-ray diffraction. For both the GaN films and powders, significant oxidation was observed at 900°ree;C, and the oxide was identified as monoclinic β-Ga₂O₃. In the temperature range 900-950°ree;C, linear followed by parabolic growth kinetics were observed. The β-Ga₂O₃/(0001) GaN films prepared by thermal oxidation in dry air were not attacked by NH₄OH:DI(1:10), HCl:DI(1:1), and H₂PO₃:DI(1:1) after even 4 hours, although slow removal of the oxide in HF:DI(1:1) was observed. These studies, as well as ongoing work in our laboratory on the wet oxidation of GaN, will be described.

This paper is part of Gallium Nitride and Related Materials II

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