Materials Research Society Symposium Proceedings 468, 487 (1997).
Below is the abstract submitted to the meeting, not the abstract of the published paper:
The study of laser gain in group-III nitrides is complicated by the incomplete knowledge of band structure properties, and the need to account for strong many-body Coulomb effects. This paper describes an approach that involves a first-principles band structure calculation based on density-functional theory. The results of the band structure calculations are incorporated into a microscopic laser theory based on the semiconductor-Bloch equations, which give a consistent treatment of the carrier-carrier Coulomb interactions.This work was supported by the U. S. Department of Energy under Contract DE-AC04-94AL85000. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy
This paper is part of Gallium Nitride and Related Materials II
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