kozodoy-mrssp-468-481

Data for reference kozodoy-mrssp-468-481

MOCVD Growth of High Output Power InGaN Multiple- Quantum-Well Light-Emitting Diode

P. Kozodoy, A. Abare, R.K. Sink, M. Mack, S. Keller, S.P. DenBaars, U.K. Mishra, D. Steigerwald

Materials Research Society Symposium Proceedings 468, 481 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
In order to achieve efficient GaN-based LEDs, the growth of high quality InGaN Cloys and the precise control of heterojunction interfaces must be accomplished. We have investigated the growth of InGaN quantum wells by MOCVD. Multiple quantum well stacks were grown under a variety of growth conditions, and the structural and optical properties of the films were characterized by x-ray diffraction, photoluminescence and TEM. The X-ray measurements show clear superlattice fringes indicating a high degree of vertical uniformity, and abrupt quantum well interfaces were observed by TEM. We observed an increase in the PL intensity of the MQW structure when the well width was reduced from 50 Å to 25 Å. An optimized MQW structure has been incorporated as the active region in a GaN p-n diode, producing a high brightness blue LED. An active region consisting of five 25 Å InGaN quantum wells was grown on Si-doped GaN. Mg-doped AlGaN and GaN layers were then deposited to complete the structure. The fabricated device emits 2.2 mW of light at 20 mA forward current (corresponding to a quantum efficiency of 4.5%), increasing to 8 mW at 100 mA. A peak emission power of 50 mW was realized under a pulsed current of 1000 mA: this is among the highest peak powers reported for InGaN LEDs. In addition, a blue shift in the emission wavelength and the appearance of Fabry-Perot fringes were observed at high current levels. In contrast to Zn-doped InGaN DH LEDs, the MQW design offers a very narrow emission linewidth. The emission spectrum of this LED was centered at 450 nm with a width of 28 nm, among the narrowest reported. This narrow spectrum contributes to the high color purity of Fe device (97.8%). Additional details of the growth and characterization of these devices will be presented.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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