tin-mrssp-468-475

Data for reference tin-mrssp-468-475

Effect of Hydrogen Chloride on the Capacitance-Voltage Characteristics of MOCVD-Grown AlN/6H-SiC MIS Structures

C.C. Tin, A. Gichuhi, M.J. Bozack, C.G. Shannon, C.K. Teh

Materials Research Society Symposium Proceedings 468, 475 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Gate insulator plays a crucial role in the electrical performance of a metal-insulator-semiconductor-field-effect-transistor (MISFET) device. In 6H-SiC technology, SiO₂ has been widely studied as the gate insulator in 6H-SiC MOSFET for high temperature and high power electronic applications. However, in spite of recent progress, there are still reservations about the suitability of SiO₂ as gate insulator for 6H-SiC MOS devices. In the search for an alternative insulator to replace SiO₂, AlN has emerged as a promising candidate due to the low lattice mismatch of <1% between the two materials. Using metalorganic chemical vapor deposition (MOCVD), we have recently found that AlN/6H-SiC MIS structures with good interfacial characteristics even at 300 deg C and remarkably high breakdown field in excess of 2 MV/cm could be obtained depending on the AlN growth procedure. We have also found that the use of hydrogen chloride gas is effective in improving the capacitance-voltage characteristics of the Au/AlN/6H-SiC MIS structure. There are several possible mechanisms for such improvement and they include factors such as substrate surface morphology, oxide contamination, and interfacial lattice ordering. In this paper, we will discuss the possible mechanisms using data from capacitance-voltge measurements, x-ray photoelectron spectroscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. ^*Supported by the Center for Commercial Development of Space Power and Advanced Electronics, located at Auburn University, with funds from NASA Grant NAGW-1192-CCDS-AD, Auburn University, and the Center‘s industrial partners; Auburn University‘s Faculty Research Start-Up Funds; Alabama Space Grant Consortium grant under NASA Grant NGT40010; and by NSF EPSCoR Grant 95192.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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