yang-mrssp-468-469

Data for reference yang-mrssp-468-469

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

K. Yang, H.T. Shi, B. Shen, R. Zhang, Z.Z. Chen, P. Chen, Y.D. Zheng

Materials Research Society Symposium Proceedings 468, 469 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
In this work, electrical and optical properties of Nichia double heterostructure blue light-emitting diodes, with In_0.06Ga_0.94N:Zn,Si active layer, are investigated at 77 and 300 K. dc I-V measurements were performed, contrary to the Shockley model of p-n diodes the slope of I-V characteristics in a semilogarithmic plot almost does not depend on temperature. In low current range, from 5x10^-6 A to 5x10^-4 A, we found the low current component can be approximated by an exponential function I(A) = I_xe^IIA, the diode ideality factor n was determined as large as 4.2, which indicates that the main transport mechanism is associated with carrier tunneling. In order to study the possible relationship between the light emission and current components, electroluminescence experiments of DH-LED were performed; we obtained an emission peak located at 2.80 eV, and a short-wavelength peak of 3.2 eV, which had a relatively weaker light intensity. As increasing the applied current, the light intensity of the two peaks correspondingly increases, with an obvious blue-shift of the emission peak, and the ratio of the intensity of the short-wavelength peak of obviously associated with interband transitions in the InGaN active region. Furthermore, we studied the properties of EL while output spectrum measurements were being made on DH-LEDs under various pulsed currents, and a degradation in I-V characteristics and a low resistance Ohmic short were observed.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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