demchuk-mrssp-468-45

Data for reference demchuk-mrssp-468-45

Toward Growing III-V Clusters With Metalorganic Precursors

A. Demchuk, J. Porter, B. Koplitz

Materials Research Society Symposium Proceedings 468, 45 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
In recent years, the field of atomic and molecular cluster formation has blossomed tremendously. Clusters often have properties different from bulk materials, and progress in cluster science has been tied to the development of new approaches to cluster formation. The present work reports on our efforts involving cluster formation that combine pulsed laser photolysis and pulsed nozzles in order to grow GaN clusters from metalorganic precursors. The experimental apparatus consists of a high vacuum chamber (base pressure ∼10^-6 Torr) equipped with a quadrupole mass spectrometer (QMS). Triethylgallium (C₂H₅)₃Ga (TEG) or trimethylgallium (CH₃)₃Ga (TMG) is used with He, Ar, or N2 as the carrier gas. The gases of ammonia (NH₃) and TMG or TEG are introduced into the high vacuum chamber via a specialized dual-source pulsed nozzle. The light from an ArF excimer laser (λ-193 nm) is focused into the mixing and reaction region of the dual-source nozzle, and the products are then mass analyzed win the QMS. The results of this research show efficient production of small GaN clusters due to laser-assisted growth.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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