Materials Research Society Symposium Proceedings 468, 445 (1997).
Below is the abstract submitted to the meeting, not the abstract of the published paper:
We will present a summary of recent progress towards the understanding of the valence-band physics in wurtzite GaN. Systematic studies have been performed on the strain dependence of the free-exciton resonance energies by photoreflectance measurements using well-characterized samples. Analyzing the experimental data with the Hamiltonian appropriate for the valence bands, the values have been determined of the crystal-field splitting, the spin-orbit splitting, the shear deformation potential constants, and the energy gap in the unstrained crystal. Using those values and the generalized Elliott formula, the absorption spectra obtained experimentally can be qualitatively reproduced. Discussion will be also given on the values of the elastic stiffness constants which play a crucial role to determine the shear deformation potential constants.
This paper is part of Gallium Nitride and Related Materials II
Contributed by Materials Research Society
last updated Wednesday, April 27, 2005 4:56:24 PM.
© 1998 The Materials Research Society