malta-mrssp-468-437

Data for reference malta-mrssp-468-437

Electron Field Emission From Aluminum Nitride

D.P. Malta, G.G. Fountain, J.B. Posthill, T.P. Humphreys, C. Pettenkofer, R.J. Markunas

Materials Research Society Symposium Proceedings 468, 437 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
The wide bandgap semiconductors AlN and diamond have been identified as candidate materials for cold cathode field emitters due to their purported negative electron affinity (NEA) surfaces. Recent studies by our group on C(001):H and AlN(0001) using angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and scanning electron microscopy (SEM) have confirmed the NEA condition of C(001):H but have indicated that AlN(0001) is a positive electron affinity surface. We have also investigated electron field emission behavior of polycrystalline diamond, AlN, and pure Al films grown on Si. Diamond films were grown by plasma-enhanced CVD and were air-transferred to the electron emission measurement system (EEMS). AlN and Al films were grown by molecular beam epitaxy (MBE) and transported via a UHV integrated processing system to the EEMS. The reference Al film on Si showed characteristic Fowler-Nordheim behavior with a turn-on field of 120 V/um (defined at 10 μA-cm^-2) and -100 μA cm^-2 emission at 140 V/μm. The AlN film also showed Fowler Nordheim behavior with a turn-on field of 60 V/μm and ∼10 mA-cm^-2 at 100 V/um. In contrast, the diamond film showed linear behavior with a turn-on field of 20 V/μm and ∼4 mA-cm^-2 at 100 V/μ

This paper is part of Gallium Nitride and Related Materials II

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