Data for reference venugopalan-mrssp-468-431

Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride

H.S. Venugopalan, S.E. Mohney, B.P. Luther, J.M. DeLucca, S.D. Wolter, J.M. Redwing, G.E. Bulman

Materials Research Society Symposium Proceedings 468, 431 (1997).

Metallurgical reactions between Ni and GaN have been explored at temperatures between 400 and 900 °ree;C in N2, Ar, and forming gas. A trend of increasing Ga content in the reacted films was observed with increasing temperature. The reactions are consistent with the thermodynamics of the Ni‐Ga‐N system. Changes in the film morphology on annealing were also examined. Metal island formation and a corresponding deep, non-uniform metal penetration into GaN were observed at high temperatures. The relevance of the observed nature of phase formation and morphology in these thin films to electrical properties of Ni/GaN and Au/Ni/GaN contacts is also considered.

This paper is part of Gallium Nitride and Related Materials II

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This item cites the following items in the database:

  1. High-power InGaN/GaN double-heterostructure violet light emitting diodes
  2. Schottky contact and the thermal stability of Ni on n-type GaN
  3. Estimated Phase Equilibria in the Transition Metal-Ga-N Systems:Consequences for Electrical Contacts to GaN
  4. Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces

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