Data for reference vartuli-mrssp-468-413

Current Transport in W and WSix Ohmic Contacts to InGaN and InN

C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, M.L. Lovejoy, R.J. Shul, J.C. Zolper, A.G. Baca, M. Hagerott-Crawford, K.A. Jones, F. Ren

Materials Research Society Symposium Proceedings 468, 413 (1997).

The temperature dependence of the specific contact resistance of W and WSi0.44 contacts on n+ In0.65Ga0.35N and InN was measured in the range -50 °ree;C to 125 °ree;C. The results were compared to theoretical values for different conduction mechanisms, to further elucidate the conduction mechanism in these contact structures. The data indicates the conduction mechanism is field emission for these contact schemes for all but as-deposited metal to InN where thermionic emission appears to be the dominant mechanism. The contacts were found to produce low specific resistance ohmic contacts to InGaN at room temperature, ρc ~ 10-7 Ωúcm2 for W and ρc of 4x 10-7 Ωúcm2 for WSix. InN metallized with W produced ohmic contacts with ρc ~ 10-7 Ωúcm2 and ρc~ 10-6 Ωúcm2.for WSix at room temperature.

This paper is part of Gallium Nitride and Related Materials II

Full Text of this article is available on this server.

Contributed by Materials Research Society

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Tuesday, May 3, 2005 5:05:54 PM.
© 1998 The Materials Research Society