ronning-mrssp-468-407

Data for reference ronning-mrssp-468-407

Recovery of Structural Defects in GaN After Heavy Ion Implantation

C. Ronning, M. Dalmer, M. Deicher, M. Restle, M.D. Bremser, R.F. Davis, H. Hofsäss

Materials Research Society Symposium Proceedings 468, 407 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
We have implanted radioactive ¹¹¹In at room temperature with an ion energy of 100 keV and a dose of 10¹³ cm^-2 into sIngle crystalline GaN films grown by MOCVD on SiC substrates. For the samples, we have measured the emission channeling effects of the conversion electrons emitted in the radioactive decay, which allows us to determine the lattice site of the implanted atoms and the quality of the crystalline structure [1]. Furthermore, we have determined the defect structure in the immediate neighborhood of the probe atoms by perturbed-γγ angular-correlation (PAC) measurements using the emitted γ radiation [2]. Since isoelectronic In occupies substitutional Ga sites, we have an ideal probe atom to study the annealing behavior of the implantation damage. We find In on substitutional sites even directly after implantation, but within a heavily disturbed surrounding. For isochronal annealing treatments in vacuum, both techniques reveal a gradual recovery of the damage between 600 K and 900 K. After 900 K annealing, over 75% of the probe atoms occupy undisturbed lattice sites. This demonstrates that damage created by ion implantation In GaN can be annealed out to a large extent. [1] H. Hofsass, Hyp. Int. 87/88 (1996) 247; Phy. Rep. 201 (1991) 121. [2] T. Wichert et al., Appl. Phys. A 48 (1989) 59

This paper is part of Gallium Nitride and Related Materials II

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