Data for reference zolper-mrssp-468-401

Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures >1100°ree;C

J.C. Zolper, J. Han, R.M. Biefeld, S.B. Van Deusen, W.R. Wampler, S.J. Pearton, J.S. Williams, H.H. Tan, R.J. Karlicek, Jr., R.A. Stall

Materials Research Society Symposium Proceedings 468, 401 (1997).

This paper is part of Gallium Nitride and Related Materials II

Full Text of this article is available on this server.

This item cites the following items in the database:

  1. High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction
  2. GaN/AlGaN MODFET with 80 GHz fmax and >100V gate-drain breakdown voltage
  3. Sputtered AlN encapsulant for high-temperature annealing of GaN

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