wells-mrssp-468-39

Data for reference wells-mrssp-468-39

New Precursor Routes to Nanocrystalline Cubic/Hexagonal Gallium Nitride, GaN

R.L. Wells, J.F. Janik, W.L. Gladfelter, J.L. Coffer, M.A. Johnson, B.D. Steffey

Materials Research Society Symposium Proceedings 468, 39 (1997).

Two precursor routes culminating in bulk nanocrystalline gallium nitride materials are reported, with emphasis on the materials’ XRD/crystalline features and photoluminescence (PL). First, the new polymeric gallium imide, {Ga(NH)_3/2}_n, can be converted to nanocrystalline, cubic/hexagonal GaN ranging in color from yellow to light gray. Second, a new route to gallazane, [H₂GaNH₂]_x, from the combination of LiGaH₄ and NH₄X (X = Cl, Br) in Et₂O is shown to result in a material that slowly converts to a polymeric solid via H₂ and NH₃ elimination-condensation pathways. Both the gallazane and the polymeric solid are pyrolyzed to dark gray nanocrystalline, phase-inhomogeneous GaN as above. Specific variations in the pyrolysis conditions enable some control over the particle nanosize and a degree of crystalline phase-inhomogeneity of the materials. These nanophase GaN materials have also been characterized by room temperature photoluminescence (PL) measurements. In general, the observed emission spectra are strongly dependent on pyrolysis temperature and typically exhibit weak defect yellow-green emission. While the as-prepared GaN does not exhibit band-edge PL, a brief hydrofluoric acid etch yields nanophase GaN exhibiting an intense blue-emitting PL spectrum with an emission maximum near 420 nm.

This paper is part of Gallium Nitride and Related Materials II

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Contributed by Richard L. Wells from gaaspin.chem.duke.edu. on September 17, 1997 12:30:08 PM
Modified by Materials Research Society

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