lee-mrssp-468-379

Data for reference lee-mrssp-468-379

Development of GaN and InGaN Gratings by Dry Etching

J.W. Lee, J. Hong, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, F. Ren, P.F. Sciortino, Jr.

Materials Research Society Symposium Proceedings 468, 379 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Submicron periodic gratings with pitch ∼3,000 Å were formed in GaN and InGaN using holographic lithography and room temperature ECR BCl₃/N₂ dry etching at moderate microwave (500 W) and rf (100 W) powers. The process produces uniform gratings without the need for elevated sample temperatures during the etch step. While GaN (or AlN) etch rates are almost independent of temperature up to 300°ree;C, the etch rates for InGaN are found to have a strong dependence on temperature, which provides an additional parameter for maximizing etch selectivities in some applications. Combined with the fact that the etch depth for periodic gratings is small, typically <2,000 Å, and that this is easily obtainable with the resist mask, there is no advantage in complicating the process by employing elevated sample temperatures which would require a much more difficult hard-mask technique.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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