lee-mrssp-468-373

Data for reference lee-mrssp-468-373

Dry Etching of GaN Using Reactive Ion-Beam Etching and Chemically Assisted Reactive Ion-Beam Etching

Jae-Won Lee, Hyong-Soo Park, Yong-Jo Park, Myong-Cheol Yoo, Tae-Il Kim, Hyeon-Soo Kim, Geun-Yong Yeom

Materials Research Society Symposium Proceedings 468, 373 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Etching characteristics of GaN thin films have been investigated using chemically assisted ion beam etching (CAIBE) and reactive ion bean etching (RIBE). Mixture of Cl₂, BCl₃, HCl, and N₂ gases were used as reactive gases. Highly collimated uniform and directional ion beam generated from inductively coupled plasma was extracted and accelerated through optically aligned triple grid. The acceleration voltage was varied from 300 V to 700 V and the beam current was varied from 100 mA to 400 mA. The tilt angle of the substrate with respect to the incident beam was also varied from O°ree; to 60°ree; . The substrate temperature was changed from 20°ree;C to 300°ree;C using specially designed heating and cooling stage. The etch rate of GaN films was linearly dependent on the beam acceleration voltage and the beam current in both RIBE and CAIBE processes. More than 250 nm/min of the etch rate was obtained in both cases. In the CAIBE process, etch selectivity of photoresist mask was typically 3:1, while that of sputter-deposited SiO₂ mask was 8:1. In the RIBE process. the selectivity was decreased with increasing substrate tilt angle. The highest etch rate we obtained when the substrate was tilted by 30°ree; . Dependence of the gas mixture and the substrate temperature is more likely in the CAIBE than in the RIBE. Highly anisotropic etch profile with smooth surface was obtained when the substrate was tilted by 30°ree; and heated above 70°ree;C with CAIBE process. The rms of roughness of etched base line was less than 5 nm and the vertical angle of etched sidewall was 90+/-2°ree; . These results are believed to be suitable for forming facet of GaN-based laser diode.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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