Data for reference kim-mrssp-468-367

Etch Characteristics of GaN Using Inductively-Coupled Cl2/HBr and Cl2/Ar Plasmas

Hyeon-Soo Kim, Y.J. Lee, Y.H. Lee, J.W. Lee, M.C. Yoo, T.I. Kim, G.Y. Yeom

Materials Research Society Symposium Proceedings 468, 367 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Recently, the dry etchings techniques using high density plasmas or chemically assisted ion beam have been reported as promising techniques in the fabrication of GaN-based optoelectronic devices. In this study, GaN epitaxial layers grown by plasma assisted molecular beam epitaxy were etched using inductively coupled Cl2HBr/Ar plasmas. Cl2 was used as the main gas and Ar or HBr varied from 0 to 50% was added to etch GaN while the operating pressures were kept less than 20 mTorr. Inductive power was varied from 200 to 600 Watts, and dc self bias voltage from 0 to 150 volts. The GaN etch rates were changed from 100 to 3000 ?min as the inductive power, bias voltage, and gas chemistry were varied. The etch selectivities over mask layers (photoresist or SiO2) decreased with the increase of inductive power and bias voltage. The results on etch rates and etch selectivities were related to the measured ion density and radical density using a Langmuir probe and quadrupole mass spectrometry. In addition, surface interactions between plasmas and GaN were measured by x-ray photoelectron spectroscopy. By optimizing process conditions, etch profiles with vertical sidewall and low surface roughness were obtained and these etch conditions were applied to the fabrication of mirror facets of GaN laser diode.

This paper is part of Gallium Nitride and Related Materials II

This item cites the following items in the database:

  1. The facet formation of GaN-based device using chemically assisted ion beam etching(CAIBE) with photoresist mask
  2. EFFECTS OF INDUCTIVELY COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN AND OHMIC CONTACT FORMATIONS
  3. Characteristics of Inductively Coupled Cl2/BCl3 Plasmas during GaN Etching

This item is cited by the following items in the database:

  1. EFFECTS OF PLASMA CONDITIONS ON THE ETCH PROPERTIES OF AlGaN
  2. EFFECTS OF INDUCTIVELY COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN AND OHMIC CONTACT FORMATIONS
  3. Characteristics of Inductively Coupled Cl2/BCl3 Plasmas during GaN Etching

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