shul-mrssp-468-355

Data for reference shul-mrssp-468-355

Patterning of GaN in High-Density Cl₂- and BCl₃-Based Plasmas

R.J. Shul, R.D. Briggs, J. Han, S.J. Pearton, J.W. Lee, C.B. Vartuli, K.P. Killeen, M.J. Ludowise

Materials Research Society Symposium Proceedings 468, 355 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Fabrication of group-III nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropic profiles, smooth surface morphologies, etch rates often exceeding 1 μm/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to the high bond energies and the relatively inert chemical nature of the group-III nitrides as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 3 to 4 orders of magnitude higher than conventional RIE systems. For example, GaN etch rates of ∼1.2 μm/min have been reported in ECR generated ICl plasmas at -150 V dc-bias. ICP and ECR etch systems can effectively decouple ion energy and ion density, thus establishing a highly flexible etch platform where etch characteristics including rate, profile, and selectivity may be more effectively controlled for specific device applications. In this study, we report high-density GaN etch results for ECR- and ICP-generated plasmas as a function of plasma chemistry. Surface roughness and near-surface stoichiometry evaluated from atomic force microscopy and Auger emission spectroscopy, respectively, will be used to evaluate etch results. Optical emission spectroscopy (OES) will also be used to identify plasma species and possible GaN etch mechanisms. This work was performed at Sandia National Laboratories, supported by the U.S. Department of Energy under contract # DE-AC04 94AL85000. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy.

This paper is part of Gallium Nitride and Related Materials II

This item is cited by the following items in the database:

A Review of Dry Etching of GaN and Related Materials

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Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas

Patterning of GaN in High-Density Cl₂- and BCl₃-Based Plasmas