pearton-mrssp-468-331

Data for reference pearton-mrssp-468-331

Processing Challenges for GaN-Based Photonic and Electronic Devices

S.J. Pearton, F. Ren, R.J. Shul, J.C. Zolper, A. Katz

Materials Research Society Symposium Proceedings 468, 331 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
We will outline the remaining processing challenges for advanced high power/high temperature GaN rectifiers, thyristors and blue/UV laser diodes. These include lower specific contact resistance ohmic contacts, especially to p-type material (which might be alleviated with use of p⁺InGaN graded layers), creation of p-n junctions with high breakdown by ion implantation, development of a gate dielectric for MOS-type transistors, avoidance of striations on laser mesa sidewalls during dry etching, high temperature stable Schottky metallization (especially based on W and related alloys) and the continuing search for room temperature, non-electrolytic or photonically enhanced wet etching solutions. The current state of the art in these areas will be outlined, and suggestions for the most promising approaches discussed. The GaN surface appears somewhat more sensitive to process-induced changes, especially during high temperature annealing, PECVD and dry etching than originally envisioned, and may show p-to-n conversion, or become more highly conducting n-type during some of these steps. Approaches for minimizing these changes are also discussed.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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